SSM5N16FE 2001-12-18 1 toshiba field effect transistor silicon n channel mos type SSM5N16FE high speed switching applications analog switching applications suitable for high-density mounting due to compact package low on resistance: r on = 3.0 ? (max) (@v gs = 4 v) : r on = 4.0 ? (max) (@v gs = 2.5 v) : r on = 1 5 ? (max) (@v gs = 1 .5 v) maximum ratings (ta = 25c) (q1, q2 common) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 10 v dc i d 100 drain current pulse i dp 200 ma drain power dissipation (ta 25c) p d (note) 150 mw channel temperature t ch 150 c storage temperature range t stg 55~150 c note: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.135 mm 2 5) marking equivalent circuit handling precaution when handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm jedec D jeita D toshiba 2-2p1b 0.3 mm 0.45 mm d s 5 4 1 2 3 54 123 q1 q2
SSM5N16FE 2001-12-18 2 electrical characteristics (ta = 25c) (q1, q2 common) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 10 v, v ds 0 1 a drain-source breakdown voltage v (br) dss i d 0.1 ma, v gs 0 20 v drain cut-off current i dss v ds 20 v, v gs 0 1 a gate threshold voltage v th v ds 3 v, i d 0.1 ma 0.6 1.1 v forward transfer admittance y fs v ds 3 v, i d 10 ma 40 ms i d 10 ma, v gs 4 v 1.5 3.0 i d 10 ma, v gs 2.5 v 2.2 4.0 drain-source on resistance r ds (on) i d 1 ma, v gs 1.5 v 5.2 15 input capacitance c iss v ds 3 v, v gs 0, f 1 mhz 9.3 pf reverse transfer capacitance c rss v ds 3 v, v gs 0, f 1 mhz 4.5 pf output capacitance c oss v ds 3 v, v gs 0, f 1 mhz 9.8 pf turn-on time t on 70 switching time turn-off time t off v dd 3 v, i d 10 ma, v gs 0~2.5 v 125 ns switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d 1 00 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) v th v gs (on) ) please take this into consideration for using the device. v gs recommended voltage of 1 .5 v or higher to turn on this product. (c) v out (b) v in t on 90% 10% 0 v 2.5 v 10% 90% t off t r t f v dd v ds ( on ) v dd 3 v duty
1% v in : t r , t f
5 ns (z out 50 ) common source ta 25c v dd out in 2.5 v 0 10 s 50 r l (a) test circuit
SSM5N16FE 2001-12-18 3 (q1, q2 common) i d ? v ds i d ? v gs r ds (on) ? i d r ds (on) ? v gs r ds (on) ? ta v th ? ta drain-source voltage v ds (v) gate-source voltage v gs (v) drain current i d (ma) gate-source voltage v gs (v) ambient temperature ta (c) ambient temperature ta (c) drain current i d (ma) drain current i d (ma) drain-source on resistance r ds (on) ( ) drain-source on resistance r ds (on) ( ) gate threshold voltage v th (v) drain-source on resistance r ds (on) ( ) 2.5 v v gs 1.5 v 0 1 4 12 1000 10 2 6 8 100 common source ta 25c 10 4 v 0 0 100 250 12 1.5 0.5 50 150 200 v gs 1.3 v 1.5 1.7 1.9 common source ta 25c 3 4 10 2.5 2.3 2.1 04 10 8 26 0 2 6 1 4 5 3 25c ta 100c 25c common source i d 10 ma 02 3 1 0.01 1 1000 0.1 10 100 ta 100c common source v ds 3 v 25c 25c 0 2 8 6 4 2.5 v, 10 ma v gs 1.5 v, i d 1 ma common source 25 50 150 125 0 75 25 100 4 v, 10 ma common source i d 0.1 ma v ds 3 v 25 50 150 125 0 75 25 100 0 0.4 2 1.2 1.6 0.8
SSM5N16FE 2001-12-18 4 (q1, q2 common) y fs ? i d i dr ? v ds c ? v ds t ? i d p d * ? ta drain current i d (ma) drain-source voltage v ds (v) drain-source voltage v ds (v) drain current i d (ma) ambient temperature ta (c) drain reverse current i dr (ma) forward transfer admittance y fs (ms) switching time t (ns) capacitance c (pf) drain power dissipation p d * (mw) 1 10 100 1000 1 3 5 10 30 50 100 300 500 common source v ds 3 v ta 25c 0.1 1 10 100 10 30 50 100 300 500 1000 3000 5000 common source v dd 3 v v gs 0~2.5 v ta 25c t r t on t f t of f 0 0 100 250 160 40 50 150 200 80 120 mounted on fr4 board. (25.4 mm 25.4 mm 1.6 t cu pad: 0.135 mm 2 5) * : total rating c iss c oss c rss common source v gs 0 v f 1 mhz ta 25c 0.3 10 100 1 5 50 0.1 1 10 100 5 50 0.5 30 3 0.5 0.3 3 30 0 100 250 50 150 200 0 1.4 0.4 0.2 0.6 0.8 1 1.2 common source v gs 0 v ta 25c g d s i dr
SSM5N16FE 2001-12-18 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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